ELECTRON-BEAM-RESIST MATERIALS WITH ENHANCED DRY ETCH RESISTANCE

被引:5
作者
AFFROSSMAN, S [1 ]
ANGADJI, H [1 ]
BAKHSHAEE, M [1 ]
COFFEY, K [1 ]
CHOW, FL [1 ]
HAYWARD, D [1 ]
MCLEOD, GG [1 ]
PETHRICK, RA [1 ]
WHITTAKER, P [1 ]
机构
[1] UNIV STRATHCLYDE,DEPT PURE & APPL CHEM,CATHEDRAL ST,GLASGOW G1 1XL,SCOTLAND
关键词
D O I
10.1016/0032-3861(89)90073-6
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
引用
收藏
页码:1022 / 1026
页数:5
相关论文
共 12 条
[1]  
AFFROSSMAN S, UNPUB
[2]  
ANDRIANOV KA, 1970, ZH OBSHCH KHIM+, V40, P582
[3]   COMPARISON OF THE ELECTRON BEAM SENSITIVITIES AND RELATIVE OXYGEN PLASMA ETCH RATES OF VARIOUS ORGANOSILICON POLYMERS. [J].
Babich, E. ;
Paraszczak, J. ;
Hatzakis, M. ;
Shaw, J. ;
Grenon, B.J. .
Microelectronic Engineering, 1985, 3 (1-4) :279-291
[4]   A NEW CLASS OF POSITIVE ELECTRON-BEAM RESISTS - METHYL-METHACRYLATE STYRENE AND BUTYL METHACRYLATE STYRENE COMB COPOLYMERS [J].
BAKHSHAEE, M ;
HAYWARD, D ;
AFFROSSMAN, S ;
SHERRINGTON, DC ;
PETHRICK, RA .
POLYMER, 1988, 29 (08) :1407-1411
[5]  
Brown JF., 1963, J POLYM SCI, V1, P83, DOI [10.1002/pol.1963.110010502, DOI 10.1002/POL.1963.110010502]
[6]  
GRIFFITHS LG, 1988, POLYM COMMUN, V29, P173
[7]  
LEDWITH A, 1988, J VAC SCI TECHNOL B, V3, P339
[8]   HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J].
MORAN, JM ;
MAYDAN, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1620-1624
[9]   POLYMER DEGRADATION IN REACTIVE-GAS PLASMAS [J].
MOSS, SJ .
POLYMER DEGRADATION AND STABILITY, 1987, 17 (03) :205-222
[10]  
PETHRICK RA, 1983, POLYMER, V24, P387