A STUDY OF THE GROWTH OF HIGH-PURITY INGAAS BY CONVENTIONAL LPE

被引：7

作者：

PENNA, TC

TAMARGO, MC

SWARTZWELDER, WL

机构：

[1] BELL TEL LABS INC,BELL COMMUN RES,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 67卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90126-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：27 / 30

页数：4

共 9 条

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[2] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

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SMITH, FGH ;

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[3] GROWTH AND PHOTO-LUMINESCENCE SPECTRA OF HIGH-PURITY LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS [J].

BHATTACHARYA, PK ;

RAO, MV ;

TSAI, MJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5096-5102

[4] HIGH-PURITY INP AND INGAASP GROWN BY LIQUID-PHASE EPITAXY [J].

COOK, LW ;

TASHIMA, MM ;

TABATABAIE, N ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :475-484

[5]

DENTAI AC, 1982, I PHYS C SER, V63, P467

[6]

KERAMIDAS VG, 1981, I PHYS C SER, V56, P95

[7]

KUPHAL E, 1983, J ELECTRON MATER, V12, P743, DOI 10.1007/BF02676801

[8] LPE GROWTH OF HIGH-PURITY INP AND IN1-XGAXP1-YASY [J].

KUPHAL, E ;

POCKER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :133-142

[9] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP [J].

OLIVER, JD ;

EASTMAN, LF .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :693-712

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