EPITAXIAL-GROWTH AND ELECTRIC CHARACTERISTICS OF CUBIC SIC ON SILICON

被引：216

作者：

NISHINO, S

SUHARA, H

ONO, H

MATSUNAMI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 10期

关键词：

D O I：

10.1063/1.338355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4889 / 4893

页数：5

共 13 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].

ADDAMIANO, A ;

SPRAGUE, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527

[2]

CARTER CH, 1985, MATERIALS RES SOC M

[3] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

[4]

JACKSON DM, 1965, T METALL SOC AIME, V223, P488

[5] VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATES [J].

KUROIWA, K ;

SUGANO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :138-140

[6]

Lely A, 1955, BER DEUT KERAM GES, V8, P229

[7]

LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[8] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J].

MATSUNAMI, H ;

NISHINO, S ;

ONO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1235-1236

[9] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J].

NELSON, WE ;

HALDEN, FA ;

ROSENGREEN, A .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :333-+

[10] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J].

NISHINO, S ;

HAZUKI, Y ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2674-2680

← 1 2 →