SILICON MOLECULAR-BEAM EPITAXY ON GAP AND GAAS

被引：0
作者：
ZALM, PC
BULLELIEUWMA, CWT
MAREE, PMJ
机构：
[1] Philips Research Labs, Eindhoven, Neth, Philips Research Labs, Eindhoven, Neth
来源：
PHILIPS TECHNICAL REVIEW | 1987年 / 43卷 / 5-6期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
27
引用
收藏
页码：154 / 165
页数：12
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