INITIAL-STAGES OF SCHOTTKY-BARRIER FORMATION - TEMPERATURE EFFECTS

被引：135
作者：
STILES, K
KAHN, A
KILDAY, DG
MARGARITONDO, G
机构：
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
[2] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期
关键词：
D O I：
10.1116/1.583833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：987 / 991
页数：5
相关论文
共 18 条
[1]   OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110) [J].
BARTELS, F ;
SURKAMP, L ;
CLEMENS, HJ ;
MONCH, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :756-762
[2]   GAAS(110)-AL INTERFACES FORMED AT LOW-TEMPERATURE [J].
BONAPACE, CR ;
LI, K ;
KAHN, A .
JOURNAL DE PHYSIQUE, 1984, 45 (NC-5) :409-418
[3]   ELECTRON-ENERGY LOSS SPECTROSCOPY FROM GAAS(110) INTERFACES [J].
BONAPACE, CR ;
TU, DW ;
LI, K ;
KAHN, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1099-1102
[4]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[5]   KINETIC-STUDY OF SCHOTTKY-BARRIER FORMATION OF IN ON GAAS(110) SURFACE [J].
CHIN, KK ;
KENDELEWICZ, T ;
MCCANTS, C ;
CAO, R ;
MIYANO, K ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :969-972
[6]   PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].
CHYE, PW ;
LINDAU, I ;
PIANETTA, P ;
GARNER, CM ;
SU, CY ;
SPICER, WE .
PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559
[7]   INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION [J].
DANIELS, RR ;
KATNANI, AD ;
ZHAO, TX ;
MARGARITONDO, G ;
ZUNGER, A .
PHYSICAL REVIEW LETTERS, 1982, 49 (12) :895-898
[8]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[9]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729
[10]   ORDER-DISORDER EFFECTS IN GAAS(110)-OXYGEN INTERACTION - LEED-UPS ANALYSIS [J].
KAHN, A ;
KANANI, D ;
MARK, P ;
CHYE, PW ;
SU, CY ;
LINDAU, I ;
SPICER, WE .
SURFACE SCIENCE, 1979, 87 (02) :325-332
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