EFFECT OF LATTICE-PARAMETER MISMATH IN NEA GAAS PHOTOCATHODES GROWN ON GAP-INXGA1-XP SUBSTRATES

被引：16

作者：

ENSTROM, RE ^{[1
]}

FISHER, DG ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1976 / 1982

页数：7

共 29 条

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[3] IMPROVED GAAS TRANSMISSION PHOTOCATHODE [J].

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SYMS, CHA ;

KING, PGR .

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[4] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J].

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SPICER, WE .

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[5]

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[6]

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[7] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].

CUSANO, DA .

SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358

[8] OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES [J].

ENSTROM, RE ;

ZANZUCCHI, PJ ;

APPERT, JR .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :300-306

[9]

ENSTROM RE, 1970, GALLIUM ARSENIDE REL, P30

[10]

ENSTROM RE, 1973, 4 P INT S GALL ARS R, P37

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