CALCULATION OF MINORITY-CARRIER CONFINEMENT PROPERTIES OF III-V SEMICONDUCTOR HETEROJUNCTIONS (APPLIED TO TRANSMISSION-MODE PHOTOCATHODES)

被引：15

作者：

JAMES, LW ^{[1
]}

机构：

[1] VARIAN ASSOC,SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.1663410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1326 / 1335

页数：10

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[8] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
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[9] DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS
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