HYDROGEN EFFECTS ON THE ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SI EPILAYERS

被引：1
作者：
SHLOPAK, NV
ULYASHIN, AG
BUMAI, YA
机构：
[1] Belarusian State Polytechnic Academy, 220027 Minsk
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 86卷 / 3-4期
关键词：
D O I：
10.1016/0168-583X(94)95293-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The influence of hydrogen plasma treatment on the free electron concentration and mobility in electron-irradiated n-type Si epilayers has been investigated by C-V, Hall effect and conductivity measurements. It is shown that hydrogen incorporated from a plasma into n-Si prior to electron irradiation leads to an increase of its radiation hardening and significantly affects the isochronal annealing behaviour. It is found that hydrogenation of electron-irradiated n-Si results in recovery of the electrical properties due to hydrogen passivation of radiation defects. The properties of electron irradiated vs gamma-irradiated hydrogenated silicon are discussed.
引用
收藏
页码：298 / 302
页数：5
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