HYDROGEN EFFECTS ON THE ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SI EPILAYERS

被引：1

作者：

SHLOPAK, NV

ULYASHIN, AG

BUMAI, YA

机构：

[1] Belarusian State Polytechnic Academy, 220027 Minsk

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 86卷 / 3-4期

关键词：

D O I：

10.1016/0168-583X(94)95293-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The influence of hydrogen plasma treatment on the free electron concentration and mobility in electron-irradiated n-type Si epilayers has been investigated by C-V, Hall effect and conductivity measurements. It is shown that hydrogen incorporated from a plasma into n-Si prior to electron irradiation leads to an increase of its radiation hardening and significantly affects the isochronal annealing behaviour. It is found that hydrogenation of electron-irradiated n-Si results in recovery of the electrical properties due to hydrogen passivation of radiation defects. The properties of electron irradiated vs gamma-irradiated hydrogenated silicon are discussed.

引用

页码：298 / 302

页数：5

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