NANOFABRICATION OF PHOTONIC LATTICE STRUCTURES IN GAAS/ALGAAS

被引:64
作者
WENDT, JR
VAWTER, GA
GOURLEY, PL
BRENNAN, TM
HAMMONS, BE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期
关键词
D O I
10.1116/1.586641
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The nanofabrication of two-dimensional photonic lattice structures in GaAs/AlGaAs is reported. The nanofabrication procedure combines direct-write electron-beam lithography and reactive-ion-beam etching to achieve etched features as small as 50 nm. The lattice comprises a hexagonal array of air cylinders etched into a semiconductor surface with a refractive index contrast of 3.54. A range of air volume fractions from 14% to 84% was investigated. The lithographic, masking, and etching processes necessary to fabricate the lattice are described along with practical limitations to achieving a lattice of arbitrary air volume fraction. Initial results from optical characterization of the lattice are also presented.
引用
收藏
页码:2637 / 2640
页数:4
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