CHARACTERIZATION OF PHOTOLUMINESCENT POROUS SI BY SMALL-ANGLE SCATTERING OF X-RAYS

被引：57

作者：

VEZIN, V ^{[1
]}

GOUDEAU, P ^{[1
]}

NAUDON, A ^{[1
]}

HALIMAOUI, A ^{[1
]}

BOMCHIL, G ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A microstructural study of high-porosity porous silicon layers formed on lightly P-doped wafers has been performed by x-ray small-angle scattering (SAXS) using the powerful and parallel beam of the synchrotron radiation. When the porosity of the sample is increased from 55% to 85% there is a continuous modification in the shape of the scattering profiles. The silicon skeleton mass fractal dimension decreases continuously. For porosity around 85%, the value for which the sample starts to display a strong photoluminescence at room temperature, there is a large increase in the pore size. The scattering profiles are characteristic of an isotropic three-dimensional structure.

引用

页码：2625 / 2627

页数：3

共 20 条

[1]

Bomchil G., 1988, Microelectronic Engineering, V8, P293, DOI 10.1016/0167-9317(88)90022-6

[2]

Brumberger H., 1967, SMALL ANGLE XRAY SCA, P1

[3] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].