THERMOSTIMULATED CONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS

被引:37
作者
FRITZSCHE, H [1 ]
IBARAKI, N [1 ]
机构
[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 03期
关键词
D O I
10.1080/13642818508240602
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:299 / 311
页数:13
相关论文
共 23 条
[1]   ANALYSIS OF THERMALLY STIMULATED CAPACITOR-DISCHARGE METHOD FOR CHARACTERIZING LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS [J].
AGARWAL, SC .
PHYSICAL REVIEW B, 1974, 10 (10) :4340-4350
[2]   ATTEMPTS TO MEASURE THERMALLY STIMULATED CURRENTS IN CHALCOGENIDE GLASSES [J].
AGARWAL, SC ;
FRITZSCHE, H .
PHYSICAL REVIEW B, 1974, 10 (10) :4351-4357
[3]   COLLECTION EFFICIENCIES OF A POINT-TO-PLANE ELECTROSTATIC PRECIPITATOR [J].
CHENG, YS ;
YEH, HC ;
KANAPILLY, GM .
AMERICAN INDUSTRIAL HYGIENE ASSOCIATION JOURNAL, 1981, 42 (08) :605-610
[5]   THERMALLY STIMULATED CURRENTS IN AMORPHOUS-SILICON [J].
FUHS, W ;
MILLEVILLE, M .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (01) :K29-K32
[6]   STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J].
HAN, D ;
FRITZSCHE, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :397-400
[7]  
HAN D, 1984, AIP C P, V120, P296
[8]   THERMOSTIMULATED CURRENTS IN A-SI-H AND A-SI-N-H [J].
IBARAKI, N ;
FRITZSCHE, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :231-236
[9]   THERMALLY STIMULATED CURRENTS IN A-SI-H [J].
MISRA, DS ;
KUMAR, A ;
AGARWAL, SC .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (06) :L69-L74
[10]   HOPPING IN EXPONENTIAL BAND TAILS [J].
MONROE, D .
PHYSICAL REVIEW LETTERS, 1985, 54 (02) :146-149