NANOMETER RESOLUTION IN LUMINESCENCE MICROSCOPY OF III-V HETEROSTRUCTURES

被引：144

作者：

ABRAHAM, DL

VEIDER, A

SCHONENBERGER, C

MEIER, HP

ARENT, DJ

ALVARADO, SF

机构：

[1] IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 16期

关键词：

D O I：

10.1063/1.103154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

引用

页码：1564 / 1566

页数：3

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