IONIZED-IMPURITY SCATTERING IN THE WEAK-SCREENING LIMIT

被引:26
作者
MEYER, JR
BARTOLI, FJ
机构
来源
PHYSICAL REVIEW B | 1985年 / 31卷 / 04期
关键词
D O I
10.1103/PhysRevB.31.2353
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2353 / 2359
页数:7
相关论文
共 33 条
  • [1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES
    ABRAM, RA
    REES, GJ
    WILSON, BLH
    [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892
  • [2] Abramowitz M., 1964, HDB MATH FUNCTIONS, P231
  • [3] STATIC CONDUCTIVITY OF A HEAVILY DOPED SEMICONDUCTOR
    ARBUZOV, YD
    EVDOKIMOV, VM
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (02): : 579 - 583
  • [4] ARBUZOV YD, 1979, SOV PHYS-SOLID STATE, V22, P316
  • [5] BROOKS H, 1951, PHYS REV, V83, pB879
  • [6] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
    CONWELL, E
    WEISSKOPF, VF
    [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
  • [7] DAVYDOV AS, 1965, QUANTUM MECHANICS, P378
  • [8] DINGLE RB, 1955, PHILOS MAG, V46, P831
  • [9] DYKHNE AM, 1967, SOV PHYS JETP-USSR, V25, P170
  • [10] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE
    KANE, EO
    [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &