HIGH-RESOLUTION MEASUREMENT OF THE STEP DISTRIBUTION AT THE SI/SIO2 INTERFACE

被引:16
作者
HENZLER, M
MARIENHOFF, P
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期
关键词
D O I
10.1116/1.582821
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:346 / 348
页数:3
相关论文
共 13 条
[1]   EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J].
GRONWALD, KD ;
HENZLER, M .
SURFACE SCIENCE, 1982, 117 (1-3) :180-187
[2]   EXPERIMENTAL COMPARISON OF ATOMIC ROUGHNESS AND HALL-MOBILITY IN P-SI INVERSION-LAYERS [J].
HAHN, PO ;
HENZLER, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6492-6496
[3]   INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J].
HAHN, PO ;
HENZLER, M .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4122-4127
[4]   THE SI-SIO2 INTERFACE - CORRELATION OF ATOMIC-STRUCTURE AND ELECTRICAL-PROPERTIES [J].
HAHN, PO ;
HENZLER, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :574-583
[5]  
HAHN PO, SURF SCI
[6]   SPOT PROFILE ANALYSIS (LEED) OF DEFECTS AT SILICON SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1983, 132 (1-3) :82-91
[7]   QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1978, 73 (01) :240-251
[8]   LEED STUDIES OF SURFACE IMPERFECTIONS [J].
HENZLER, M .
APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :450-469
[9]  
HENZLER M, UNPUB APPL PHYS
[10]   DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES [J].
LENT, CS ;
COHEN, PI .
SURFACE SCIENCE, 1984, 139 (01) :121-154