THE INFLUENCE OF ELECTRON-HOLE DENSITY PROFILE ON THE PICOSECOND TIME-RESOLVED REFLECTIVITY MEASUREMENT IN SILICON

被引：7
作者：
MA, HM
LIU, YX
FEI, Y
LI, FM
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期
关键词：
D O I：
10.1063/1.343177
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5031 / 5034
页数：4
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