4-WAVE-MIXING REFLECTIVITY OF SILICON AT 1.06 MU-M - INFLUENCE OF FREE-CARRIER ABSORPTION

被引：10

作者：

EICHLER, HJ

CHEN, J

RICHTER, K

机构：

来源：

APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY | 1987年 / 42卷 / 04期

关键词：

D O I：

10.1007/BF00693938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：215 / 219

页数：5

共 12 条

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[2]

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[3]

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JAIN, RK .

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[5] HIGH-EFFICIENCY DEGENERATE 4-WAVE MIXING OF 1.06-MU-M RADIATION IN SILICON [J].

JAIN, RK ;

KLEIN, MB ;

LIND, RC .

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[6] DEGENERATE 4-WAVE MIXING NEAR THE BAND-GAP OF SEMICONDUCTORS [J].

JAIN, RK ;

KLEIN, MB .

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[7]

JAIN RK, 1982, OPTICAL PHASE CONJUG

[8] INVESTIGATION OF NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS BY METHOD OF TRANSIENT HOLOGRAMS [J].

JARASIUNAS, K ;

VAITKUS, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02) :793-800

[9] DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION [J].

SVANTESSON, KG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (03) :425-436

[10]

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