APPLICATION OF HIGH-RATE EXB OR MAGNETRON SPUTTERING IN METALLIZATION OF SEMICONDUCTOR-DEVICES

被引:41
作者
WILSON, RW [1 ]
TERRY, LE [1 ]
机构
[1] MOTOROLA INC,SEMICOND PROD DIV,5005 E MCDOWELL RD,PHOENIX,AZ 85008
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期
关键词
D O I
10.1116/1.568813
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:157 / 164
页数:8
相关论文
共 10 条
[1]   DC BIAS-SPUTTERED ALUMINUM FILMS [J].
BLACHMAN, AG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :299-302
[2]  
BLACK JR, 1968, J ELECTROCHEM SOC, V115, pC242
[3]  
BLECH IA, 1971, 8 ANN P REL PHYS S I, P144
[4]   EFFECT OF ALLOY ADDITIONS ON ELECTROMIGRATION FAILURES IN THIN ALUMINUM FILMS [J].
GANGULEE, A ;
DHEURLE, FM .
APPLIED PHYSICS LETTERS, 1971, 19 (03) :76-&
[5]  
GAYDOU VF, 1966, VAK TECH, P161
[6]  
HERMAN DS, 1973, ELECTROCHEM SOC, P385
[7]   DEGRADATION OF OXIDE-FILMS DUE TO RADIATION EFFECTS IN EXPOSURE TO PLASMAS IN SPUTTER DEPOSITION AND BACKSPUTTERING [J].
MCCAUGHAN, DV ;
KUSHNER, RA .
PROCEEDINGS OF THE IEEE, 1974, 62 (09) :1236-1241
[8]  
SKOW K, 1971, FEB IC PROC PROD C P
[9]  
TERRY L, 1974, MAY EL SOC M ABSTR S
[10]   SLT DEVICE METALLURGY AND ITS MONOLITHIC EXTENSION [J].
TOTTA, PA ;
SOPHER, RP .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (03) :226-&