X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF RADIATION-DAMAGED SI-SIO2 INTERFACES

被引：10
作者：
BERTRAND, PA
FLEISCHAUER, PD
SONG, Y
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期
关键词：
D O I：
10.1063/1.332125
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1100 / 1103
页数：4
相关论文
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