AMORPHOUS-SILICON SILICON-NITRIDE FIELD-EFFECT TRANSISTORS

被引：5
作者：
KATOH, K [1 ]
YASUI, M [1 ]
WATANABE, H [1 ]
机构：
[1] SENDAI RADIO TECH COLL,KAMI AYASHI,MIYAGI 98931,JAPAN
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 14期
关键词：
D O I：
10.1049/el:19820411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：599 / 600
页数：2
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