AMORPHOUS-SILICON SILICON-NITRIDE FIELD-EFFECT TRANSISTORS

被引：5

作者：

KATOH, K ^{[1
]}

YASUI, M ^{[1
]}

WATANABE, H ^{[1
]}

机构：

[1] SENDAI RADIO TECH COLL,KAMI AYASHI,MIYAGI 98931,JAPAN

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 14期

关键词：

D O I：

10.1049/el:19820411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：599 / 600

页数：2

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