HYSTERESIS FREE SIO2/INSB METAL-INSULATOR-SEMICONDUCTOR DIODES

被引：25
作者：
OKAMURA, M
MINAKATA, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期
关键词：
D O I：
10.1063/1.334397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2060 / 2066
页数：7
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共 13 条
[1]   COMPOSITION, CHEMICAL BONDING, AND CONTAMINATION OF LOW-TEMPERATURE SIOXNY INSULATING FILMS [J].
ANDERSON, GW ;
SCHMIDT, WA ;
COMAS, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :424-430
[2]   MODEL FOR LARGE-AMPLITUDE HYSTERESIS IN MIS STRUCTURES ON INSB [J].
BUXO, J ;
ESTEVE, D ;
FARRE, J ;
SARRABAYROUSE, G ;
SIMONNE, J .
APPLIED PHYSICS LETTERS, 1978, 33 (11) :969-971
[3]   ORIENTATION DEPENDENCE OF SURFACE CHARGE ON ANODIZED INSB [J].
CHANG, LL .
SOLID-STATE ELECTRONICS, 1967, 10 (01) :69-&
[4]   SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J].
CHANG, LL ;
HOWARD, WE .
APPLIED PHYSICS LETTERS, 1965, 7 (08) :210-&
[5]   A THEORETICAL-STUDY OF THE LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SIO2-FILMS [J].
COBIANU, C ;
PAVELESCU, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1888-1893
[6]   INTERFACE STATE DENSITY AND OXIDE CHARGE MEASUREMENTS ON METAL-ANODIC-OXIDE-INSB SYSTEM [J].
ETCHELLS, A ;
FISCHER, CW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4605-4610
[7]   SURFACE STUDY OF ANODIZED INDIUM ANTIMONIDE [J].
HUNG, RY ;
YON, ET .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2185-+
[8]   INTERFACE PROPERTIES OF INSB MIS STRUCTURES [J].
KIM, JC .
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04) :200-207
[9]   CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].
LANGAN, JD ;
VISWANATHAN, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477
[10]   C-V MEASUREMENTS ON MIS STRUCTURES ON N-INSB FORMED BY ROOM-TEMPERATURE REACTIVE DEPOSITION OF SI3N4 [J].
OLCAYTUG, F ;
RIEDLING, K ;
FALLMANN, W .
ELECTRONICS LETTERS, 1980, 16 (17) :677-678
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