RHEED STUDIES OF SEMICONDUCTOR GROWTH BY MBE

被引：1
|
作者：
DOBSON, PJ
JOYCE, BA
NEAVE, JH
ZHANG, J
机构：
[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,LONDON SW7 2BZ,ENGLAND
来源：
VACUUM | 1988年 / 38卷 / 4-5期
关键词：
D O I：
10.1016/0042-207X(88)90095-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：422 / 423
页数：2
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