KINETIC STUDIES OF N2 AND N2-SF6 FOLLOWING PROTON EXCITATION

被引:34
|
作者
CHEN, CH [1 ]
PAYNE, MG [1 ]
HURST, GS [1 ]
JUDISH, JP [1 ]
机构
[1] OAK RIDGE NATL LAB, OAK RIDGE, TN 37830 USA
来源
JOURNAL OF CHEMICAL PHYSICS | 1976年 / 65卷 / 10期
关键词
D O I
10.1063/1.432902
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:3863 / 3868
页数:6
相关论文
共 50 条
  • [41] EXCITATION OF N2 POSITIVE AND N2+ MEINEL SYSTEMS
    SHEMANSK.DE
    BROADFOO.AL
    TRANSACTIONS-AMERICAN GEOPHYSICAL UNION, 1970, 51 (04): : 368 - +
  • [42] Comparison of SF6/N2 and SF6/CO2 gas mixtures as alternatives to SF6 gas
    Qiu, Y
    Kuffel, E
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 1999, 6 (06) : 892 - 895
  • [43] Ultra fast marx generator of N2, SF6, N 2-SF6 mixture gas based on research output characteristics
    Doo, Jin-Suk
    Han, Seung-Moon
    Huh, Chang-Su
    Choi, Jin-Soo
    Transactions of the Korean Institute of Electrical Engineers, 2010, 59 (10): : 1850 - 1855
  • [44] Analysis of by-products of N2-SF6 gas mixtures sparked under inhomogenous field conditions
    Rajan, JS
    Dwarakanath, K
    Srinivasan, N
    GASEOUS DIELECTRICS X, 2004, : 299 - 304
  • [45] Unique corona and creeping flashover characteristics in N2 and N2/SF6 mixtures on highly nonuniform narrow gap
    Ueno, H
    Kawano, T
    Nishikawa, T
    Nakayama, H
    PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3, 2003, : 232 - 237
  • [46] INTENSE LASER-EMISSION AT 3577 A USING N2-SF6 MIXTURES IN A TE NITROGEN LASER
    ITANI, J
    KAGAWA, K
    KIMURA, Y
    APPLIED PHYSICS LETTERS, 1975, 27 (09) : 503 - 504
  • [47] Effects of vibrationally excited N2 molecules on dielectric breakdown properties of SF6-N2 mixtures
    Tang, Nian
    Guo, Ze
    Zhou, Yongyan
    Li, Li
    AIP ADVANCES, 2018, 8 (10)
  • [48] Ionization and electron emission processes active in negative corona current pulse in N2-SF6 mixtures
    Zahoranová, A
    Kúdelcík, J
    Paillol, J
    Cernák, M
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (08) : 762 - 769
  • [49] Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma
    Sreenidhi, T.
    Baskar, K.
    DasGupta, Amitava
    DasGupta, Nandita
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)
  • [50] Experimental Study of Synergism in N2 and SF6 Gas Mixtures
    Hiziroglu, Huseyin R.
    Bian, Xingming
    Lu, Tiebing
    PROCEEDINGS OF THE 2020 3RD IEEE INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD 2020), 2020, : 814 - 817