THE ISOTOPE STUDY OF THE SI-H ABSORPTION PEAKS IN THE FZ-SI GROWN IN HYDROGEN ATMOSPHERE

被引：56
作者：
BAI, GR
QI, MW
XIE, LM
SHI, TS
机构：
来源：
SOLID STATE COMMUNICATIONS | 1985年 / 56卷 / 03期
关键词：
D O I：
10.1016/0038-1098(85)91010-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：277 / 281
页数：5
相关论文
共 10 条
[1]  
BENYUAN G, 1985, SCI SINICA A, V1, P67
[2]   INFRARED-ABSORPTION OF SILICON IRRADIATED BY PROTONS [J].
GERASIMENKO, NN ;
ROLLE, M ;
CHENG, LJ ;
LEE, YH ;
CORELLI, JC ;
CORBETT, JW .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (02) :689-695
[3]   ON THE IDENTIFICATION OF THE VIBRATIONAL-SPECTRA IN HYDROGEN IMPLANTED CRYSTALLINE SILICON [J].
MUKASHEV, BN ;
NUSSUPOV, KH ;
TAMENDAROV, MF ;
FROLOV, VV .
PHYSICS LETTERS A, 1982, 87 (07) :376-380
[4]  
QI MW, UNPUB MATER LETT
[5]   MODELS FOR THE HYDROGEN-RELATED DEFECT IMPURITY COMPLEXES AND SI-H INFRARED BANDS IN CRYSTALLINE SILICON [J].
SHI, TS ;
SAHU, SN ;
OEHRLEIN, GS ;
HIRAKI, A ;
CORBETT, JW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01) :329-341
[6]  
SHI TS, UNPUB PHYS STATUS SO
[7]  
SHUFAN C, 1984, SCI SINICA A, V27, P213
[8]  
SHUFAN C, 1979, ACTA PHYS SINICA, V28, P791
[9]   VIBRATIONAL AND ELECTRONIC-STRUCTURE OF HYDROGEN-RELATED DEFECTS IN SILICON CALCULATED BY EXTENDED HUCKEL THEORY [J].
SINGH, VA ;
WEIGEL, C ;
CORBETT, JW ;
ROTH, LM .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 81 (02) :637-646
[10]   BONDING AND THERMAL-STABILITY OF IMPLANTED HYDROGEN IN SILICON [J].
STEIN, HJ .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :159-174
1