INTERFACE-TRAP GENERATION MODELING OF FOWLER-NORDHEIM TUNNEL INJECTION INTO ULTRA-THIN GATE OXIDE

被引：54

作者：

HORIGUCHI, S

KOBAYASHI, T

SAITO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：387 / 391

页数：5

共 15 条

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