INVESTIGATIONS ON THE HCL GAS-PHASE ETCHING OF DIFFERENTLY DOPED AND ORIENTED GAAS CRYSTALS

被引：8
作者：
DORSHCHAND, S
DAWERITZ, L
BERGER, H
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1983年 / 18卷 / 11期
关键词：
D O I：
10.1002/crat.2170181109
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1359 / 1368
页数：10
相关论文
共 22 条
[1]   VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].
ARTHUR, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&
[2]  
BAKIN NN, 1972, IAN SSSR NEORG MATER, V8, P1364
[3]   VAPOR-PHASE ETCHING AND POLISHING OF GAAS USING ARSENIC-TRICHLORIDE [J].
BHAT, R ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1447-1448
[4]   VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS [J].
BHAT, R ;
BALIGA, BJ ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1378-1382
[5]   FACETTING, STEPS AND RECONSTRUCTION ON GAAS (001) [J].
DAWERITZ, L .
SURFACE SCIENCE, 1982, 118 (03) :585-596
[6]  
DURAND JM, 1979, PHILIPS J RES, V34, P177
[7]   ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :433-436
[8]   EXPERIMENTAL AND THEORETICAL-STUDY OF LOW-PRESSURE GAAS VPE IN THE CHLORIDE SYSTEM [J].
GENTNER, JL ;
BERNARD, C ;
CADORET, R .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :332-343
[9]   MECHANISMS AND KINETICS OF VAPOR-PHASE ETCHING OF GAAS AND GAP [J].
GIVARGIZOV, EI ;
BABASIAN, RA .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (05) :883-904
[10]  
GURCHENOK GA, 1980, IZV AN SSSR NM, V16, P2099
123