LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M

被引:39
作者
KAMINOW, IP
EISENSTEIN, G
STULZ, LW
DENTAI, AG
机构
关键词
D O I
10.1109/JQE.1983.1071724
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:78 / 82
页数:5
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