PREFERENTIAL MIGRATION OF INDIUM ATOMS ON THE (411)A PLANE IN INGAAS GROWN ON GAAS CHANNELED SUBSTRATES BY MOLECULAR-BEAM EPITAXY

Lateral profiles of In content in a 1.5 mu m thick InxGa1-xAs (x similar or equal to 0.2) layer grown on GaAs channeled substrates (CSs) with (411)A side-slopes by molecular beam epitaxy (MBE) have been investigated with the use of energy dispersive X-ray spectroscopy (EDX). The observed profiles of the In content suggested that In atoms migrate preferentially in the [1 ($) over bar 2 ($) over bar 2] direction on the (411)A plane during MBE growth. This preferential migration of In atoms along [1 ($) over bar 2 ($) over bar 2] on the (411)A plane was confirmed by comparing observed lateral profiles of In content in InGaAs layers grown on GaAs CSs and simulated In profiles which are calculated by taking into account of an additional one-way flow of In atoms along [1 ($) over bar 2 ($) over bar 2].