QUANTUM CONFINEMENT IN NANOMETER-SIZED SILICON CRYSTALLITES

被引：56

作者：

ZHAO, XW ^{[1
]}

SCHOENFELD, O ^{[1
]}

KOMURO, S ^{[1
]}

AOYAGI, Y ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.50.18654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Picosecond decay and temperature-dependence measurements of violet and blue-light emissions from nanocrystalline-silicon thin films were carried out. The luminescence band exhibits separated peaks at a wavelength region from 350 to 500 nm and shows no intensity degradation. The emission energies of the peaks shift towards the high-energy side at low temperatures by a temperature coefficient similar to single-crystalline silicon. The photoluminescence decays of these emissions can be completely fitted by a double-exponential equation. The two components of the lifetime 1 and 2 determined from the decay curves are 170 and 600 ps, respectively. All the optical events finish within 5 ns. The short lifetimes are suggested to be caused by an enhancement effect on the oscillator strength of the confined levels in zero-dimensionally confined silicon nanometer-sized crystallites. © 1994 The American Physical Society.

引用

页码：18654 / 18657

页数：4

共 15 条

[1] CAPPED NANOMETER SILICON ELECTRONIC MATERIALS [J].