STUDIES OF DISORDER INDUCED BY ION-IMPLANTATION INTO SILICON USING INSITU STRESS MEASUREMENT TECHNIQUE

Detailed studies of the stresses induced by implantation into silicon of ions of different types, such as boron, argon, krypton, neon, xenon, etc, were carried out in situ, using highly sensitive technique. The measurements were made for keV implanted particles, for a wide range of doses and for different values of dose-rate and target temperatures. It was shown that accumulation of defects up to critical dose of amorphization is dose-rate dependent for both light and heavy ions. Heavy-ion implantation behaves similarly to light-ion implantation at a higher temperature. A comparison of TEM investigation and triple-crystals X-ray measurement with stress data was made. The results indicate that (i) the ion-beam-induced deformation correlates with structural changes, and (ii) both homogeneous and heterogeneous mechanisms are involved in the structural transformations.