CHARACTERISTICS OF NARROW-CHANNEL POLYSILICON THIN-FILM TRANSISTORS

被引：14

作者：

YAMAUCHI, N ^{[1
]}

HAJJAR, JJJ ^{[1
]}

REIF, R ^{[1
]}

NAKAZAWA, K ^{[1
]}

TANAKA, K ^{[1
]}

机构：

[1] MIT, DEPT ELECT ENGN & COMP SCI, CAMBRIDGE, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 08期

关键词：

D O I：

10.1109/16.119042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of channel width on the characteristics of polysilicon thin-film transistors (TFT) was investigated. n-channel TFT's with a channel length L of 20-mu-m and a channel width W ranging from 20 to 0.5-mu-m were fabricated and characterized. The most prominent effect of reducing the TFT channel was a drastic decrease in threshold voltage when W was reduced to less than 5-mu-m. This decrease was found to be correlated with the decrease in grain-boundary trap density.

引用

页码：1967 / 1968

页数：2

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