GALLIUM-ARSENIDE TRAVELING-WAVE FIELD-EFFECT TRANSISTORS

被引：34

作者：

HOLDEN, AJ ^{[1
]}

DANIEL, DR ^{[1
]}

DAVIES, I ^{[1
]}

OXLEY, CH ^{[1
]}

REES, HD ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 01期

关键词：

D O I：

10.1109/T-ED.1985.21910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：61 / 66

页数：6

共 13 条

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[7] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

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[8] THEORY OF TRAVELING-WAVE TRANSISTORS [J].

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[10] TEM WAVE PROPERTIES OF MICROSTRIP TRANSMISSION LINES [J].

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