MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS LAYER DIRECTLY ON GAP SUBSTRATE

被引：11

作者：

TSUJI, M

TAKANO, Y

TORIHATA, T

KANAYA, Y

PAK, K

YONEZU, H

机构：

[1] Toyohashi Univ of Technology, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

Molecular Beam Epitaxy - Optoelectronic Devices - Silicon and Alloys - X-Rays--Diffraction;

D O I：

10.1016/0022-0248(89)90430-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The crystalline quality was investigated, relating to the initial growth process in the 4% lattice mismatched system of GaAs on GaP. A high quality GaAs epilayer was obtained under optimum conditions of As4/Ga beam flux ratio. The results were compared with those of GaAs/Si(100) and GaAs/Si(111). It was clarified that two-dimensional growth, realized under the optimum conditions, leads to high crystalline quality in terms of surface morphology, etch pit density and FWHM value of double crystal X-ray diffraction.

引用

收藏

页码：405 / 409

页数：5

相关论文

共 19 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[2] PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J].

AKSUN, MI ;

MORKOC, H ;

LESTER, LF ;

DUH, KHG ;

SMITH, PM ;

CHAO, PC ;

LONGERBONE, M ;

ERICKSON, LP .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1654-1655

[3] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].

BIEGELSEN, DK ;

PONCE, FA ;

SMITH, AJ ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859

[4] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2780-&

[5] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[6] LOW-THRESHOLD HIGH-EFFICIENCY ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION-LASERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

VANDERZIEL, JP ;

LOGAN, RA ;

BROWN, JM ;

PINZONE, CJ .

APPLIED PHYSICS LETTERS, 1987, 50 (07) :407-409

[7] LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI [J].

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

PION, M ;

SPECHT, A ;

BURKHART, G ;

APPELMAN, H ;

MCGOUGAN, D ;

RICE, R .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1360-1361

[8] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J].

FISCHER, R ;

NEUMAN, D ;

ZABEL, H ;

MORKOC, H ;

CHOI, C ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1986, 48 (18) :1223-1225

[9] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[10] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J].

ITOH, Y ;

NISHIOKA, T ;

YAMAMOTO, A ;

YAMAGUCHI, M .

APPLIED PHYSICS LETTERS, 1986, 49 (23) :1614-1616