THE TWIN-PORT MEMORY CELL

被引：6
作者：
OCONNOR, KJ
机构：
[1] AT&T Bell Lab, Allentown, PA,, USA, AT&T Bell Lab, Allentown, PA, USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 05期
关键词：
D O I：
10.1109/JSSC.1987.1052804
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
19
引用
收藏
页码：712 / 720
页数：9
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