REM STUDIES OF GE GROWTH ON AU-ADSORBED SI(001) SURFACES

被引：9
作者：
MINODA, H
TANISHIRO, Y
YAMAMOTO, N
YAGI, K
机构：
[1] Physics Department, Tokyo Institute of Technology, Meguro, Tokyo, 152, Oh-okayama
来源：
SURFACE SCIENCE | 1995年 / 331卷
关键词：
GERMANIUM; GROWTH; LOW INDEX SINGLE CRYSTAL SURFACES; REFLECTION ELECTRON MICROSCOPY (REM); SILICON;
D O I：
10.1016/0039-6028(95)00281-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Growths of Ge on Au-adsorbed Si(001) root 26 X 1 and c(18 X 2) surfaces were studied by REM-RHEED. By Ge deposition these Au-adsorbed structures transformed to the root 26 X 1 structure below 600 degrees C and to a 4 X n structure above 600 degrees C. Changes of the domain structure with the changes of the surface structure were observed. In spite of the changes of the surface structure traces of the domain structures of the starting surface remained. Domain boundaries were preferential nucleation sites of 3D Ge islands. Surface diffusion of Ge atoms and their capturing rate at step edges of the 2D islands were anisotropic on the root 26 X 1 reconstruction.
引用
收藏
页码：913 / 919
页数：7
相关论文
共 13 条
[11]  
SKAMOTO K, 1993, JPN J APPL PHYS, V32, pL204
[12]  
YAMANAKA A, 1992, SURF SCI, V264, P55, DOI 10.1016/0039-6028(92)90164-2
[13]   GE SEGREGATION AT SI/SI1-XGEX INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].
ZALM, PC ;
VANDEWALLE, GFA ;
GRAVESTEIJN, DJ ;
VANGORKUM, AA .
APPLIED PHYSICS LETTERS, 1989, 55 (24) :2520-2522
12