THE GROWTH BY MOCVD USING NEW GROUP-VI SOURCES AND ASSESSMENT BY HRTEM AND CL OF ZN-BASED II-VI SINGLE-CRYSTAL LAYERS

被引：24

作者：

COCKAYNE, B ^{[1
]}

WRIGHT, PJ ^{[1
]}

SKOLNICK, MS ^{[1
]}

PITT, AD ^{[1
]}

WILLIAMS, JO ^{[1
]}

NG, TL ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,POB 88,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90111-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：17 / 22

页数：6

共 11 条

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[3]

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[7] HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY (HRTEM) OF INTERFACES IN EPITAXIAL ZNSEYS1-Y GROWN BY MOCVD [J].

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[8] HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY (HRTEM) OF EPITAXIALLY GROWN ZNSE AND ZNSE GAAS INTERFACES [J].

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[9]

Wright P, Unpublished data

[10] THE USE OF HETEROCYCLIC-COMPOUNDS IN THE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL ZNS, ZNSE AND ZNO [J].

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