IMPROVED SCHOTTKY CAPACITANCE SPECTROSCOPY METHOD FOR THE STUDY OF INTERFACE STATES IN METAL-SEMICONDUCTOR JUNCTIONS

被引：18
作者：
CHEKIR, F
BARRET, C
机构：
[1] CNRS, Inst d'Electronque, Fondamentale, Orsay, Fr, CNRS, Inst d'Electronque Fondamentale, Orsay, Fr
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期
关键词：
D O I：
10.1063/1.95101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
6
引用
收藏
页码：1212 / 1214
页数：3
相关论文
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BARRET, C ;
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12) :2421-2438
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[3]   A STUDY OF INTERFACE STATES IN METAL-GAAS (110) STRUCTURES BY SCHOTTKY CAPACITANCE SPECTROSCOPY [J].
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[4]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
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[5]   ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].
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ELECTRONICS LETTERS, 1977, 13 (07) :191-193
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