IMPROVED SCHOTTKY CAPACITANCE SPECTROSCOPY METHOD FOR THE STUDY OF INTERFACE STATES IN METAL-SEMICONDUCTOR JUNCTIONS

被引：18

作者：

CHEKIR, F

BARRET, C

机构：

[1] CNRS, Inst d'Electronque, Fondamentale, Orsay, Fr, CNRS, Inst d'Electronque Fondamentale, Orsay, Fr

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.95101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

6

引用

收藏

页码：1212 / 1214

页数：3

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[1] STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING SCHOTTKY CAPACITANCE SPECTROSCOPY
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (12): : 2421 - 2438
[2] INTERFACE STATES IN A CLEAVED METAL-SILICON JUNCTION
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VAPAILLE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4217 - 4222
[3] A STUDY OF INTERFACE STATES IN METAL-GAAS (110) STRUCTURES BY SCHOTTKY CAPACITANCE SPECTROSCOPY
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6474 - 6480
[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[5] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
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MITONNEAU, A
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193