THE INFLUENCE OF DEEP LEVELS ON PHOTOMEMORY EFFECT IN STRUCTURES WITH A POTENTIAL BARRIER

被引：1
作者：
BORKOVSKAYA, OY
DMITRUK, NL
LITOVCHENKO, VG
MAEVA, OI
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期
关键词：
D O I：
10.1002/pssa.2210840136
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：285 / 290
页数：6
相关论文
共 10 条
[1]  
BORKOVSKAYA OY, 1983, POVERKHNOST, V5, P61
[2]   TRANSITION PROCESSES IN SEMICONDUCTOR LASERS [J].
CALLAWAY, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (08) :1063-&
[3]  
DMITRUK NL, 1972, UKR FIZ ZH, V17, P1356
[4]  
DMITRUK NL, 1980, FIZ TEKH POLUPROV, V14, P1555
[5]  
KOPILOV AA, 1974, FIZ TVERD TELA, V16, P1837
[6]   GAAS-OXIDE INTERFACE STATES - GIGANTIC PHOTO-IONIZATION VIA AUGER-LIKE PROCESS [J].
LAGOWSKI, J ;
KAZIOR, TE ;
WALUKIEWICZ, W ;
GATOS, HC ;
SIEJKA, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :519-524
[7]  
LUKOVSKY G, 1965, SOLID STATE COMMUN, V3, P299
[8]  
Omel'yanovskii E. M., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P380
[9]  
TIMASHEV SP, 1974, ELECTRONIC PROCESSES, P201
[10]  
Zuev V. A., 1975, FIZ TEKH POLUPROV, V9, P1641
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