GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING

[1] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21

[3] Fukuzawa T., 1979, APPL PHYS LETT, V36, P181

[4] POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN GAAS-ALGAAS MQW LASER-DIODES [J]. ELECTRONICS LETTERS, 1983, 19 (05) : 166 - 168

[5] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[6] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[7] TRANSVERSE-MODE CONTROL AND REDUCTION OF THRESHOLD CURRENT IN (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH A BURIED OPTICAL GUIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L591 - L594

[8] BURIED-HETEROSTRUCTURE ALGAAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 205 - 215

[9] REFRACTIVE-INDEX OF GAAS-ALAS SUPER-LATTICE GROWN BY MBE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 397 - 411

[10] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788

[1] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21

[3] Fukuzawa T., 1979, APPL PHYS LETT, V36, P181

[4] POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN GAAS-ALGAAS MQW LASER-DIODES [J]. ELECTRONICS LETTERS, 1983, 19 (05) : 166 - 168

[5] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[6] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[7] TRANSVERSE-MODE CONTROL AND REDUCTION OF THRESHOLD CURRENT IN (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH A BURIED OPTICAL GUIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L591 - L594

[8] BURIED-HETEROSTRUCTURE ALGAAS LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 205 - 215

[9] REFRACTIVE-INDEX OF GAAS-ALAS SUPER-LATTICE GROWN BY MBE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 397 - 411

[10] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788