GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD

被引:88
作者
LONG, JA
RIGGS, VG
JOHNSTON, WD
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关键词
D O I
10.1016/0022-0248(84)90003-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:10 / 14
页数:5
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共 21 条
[1]  
Alferov Zh. I., 1982, Soviet Technical Physics Letters, V8, P296
[2]   VAPOR PRESSURE AND THIRD-LAW ENTROPY OF FERROCENE [J].
ANDREWS, JTS ;
WESTRUM, EF .
JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1969, 17 (02) :349-&
[3]  
ANTYPAS GA, 1977, I PHYS C SER B, V33, P55
[4]  
BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119
[5]   METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE [J].
BASS, SJ ;
PICKERING, C ;
YOUNG, ML .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :68-75
[6]   THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J].
BENZ, KW ;
RENZ, H ;
WEIDLEIN, J ;
PILKUHN, MH .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :185-192
[7]  
BHAT R, 1982, I PHYS C SER, V63, P101
[8]  
CHATTERJEE AK, 1982, INT M RELATIONSHIP E
[9]  
COX HM, 1980, SEMIINSULATING 3 5 M, P46
[10]   HIGH-RESISTIVITY LAYERS IN N-INP PRODUCED BY FE ION-IMPLANTATION [J].
DONNELLY, JP ;
HURWITZ, CE .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :475-478