ETCH-INDUCED MOS GUARD-RING-PROTECTED SCHOTTKY-BARRIER DIODES

被引：3

作者：

SREENATH, RN ^{[1
]}

CHANDRA, MM ^{[1
]}

SURYAN, G ^{[1
]}

机构：

[1] INDIAN INST SCI, DEPT PHYS, BANGALORE 560012, KARNATAKA, INDIA

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1984年 / 131卷 / 02期

关键词：

SEMICONDUCTOR DEVICES; MOS - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER;

D O I：

10.1049/ip-i-1.1984.0018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technique for the fabrication of Schottky-barrier diodes with near ideal characteristics is discussed. The fabrication employs a two mask process with an isotropic etching step to round off the corners of the metallurgical junction. A self-aligned MOS guard ring is also incorporated, the use of which is optional.

引用

页码：63 / 65

页数：3

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