ETCH-INDUCED MOS GUARD-RING-PROTECTED SCHOTTKY-BARRIER DIODES

被引：3

作者：

SREENATH, RN ^{[1
]}

CHANDRA, MM ^{[1
]}

SURYAN, G ^{[1
]}

机构：

[1] INDIAN INST SCI, DEPT PHYS, BANGALORE 560012, KARNATAKA, INDIA

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1984年 / 131卷 / 02期

关键词：

SEMICONDUCTOR DEVICES; MOS - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER;

D O I：

10.1049/ip-i-1.1984.0018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technique for the fabrication of Schottky-barrier diodes with near ideal characteristics is discussed. The fabrication employs a two mask process with an isotropic etching step to round off the corners of the metallurgical junction. A self-aligned MOS guard ring is also incorporated, the use of which is optional.

引用

页码：63 / 65

页数：3

共 50 条

[1] THE GUARD-RING TERMINATION FOR THE HIGH-VOLTAGE SIC SCHOTTKY-BARRIER DIODES
UENO, K
URUSHIDANI, T
HASHIMOTO, K
SEKI, Y
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (07) : 331 - 332
[2] SCHOTTKY-BARRIER DIODES
ADAMS, AR
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (10): : 958 - &
[3] Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes
Khemka, V
Chow, TP
Gutmann, RJ
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (10) : 1128 - 1135
[4] Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes
V. Khemka
T. P. Chow
R. J. Gutmann
Journal of Electronic Materials, 1998, 27 : 1128 - 1135
[5] A SCHOTTKY-BARRIER DIODE WITH SELF-ALIGNED FLOATING GUARD RING
CHUANG, CT
ARIENZO, M
TANG, DDL
ISAAC, RD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1482 - 1486
[6] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
EGLASH, SJ
NEWMAN, N
PAN, S
MO, D
SHENAI, K
SPICER, WE
PONCE, FA
COLLINS, DM
JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5159 - 5169
[7] COMMENT ON ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
HORVATH, ZJ
JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 443 - 444
[8] A SCHOTTKY-BARRIER DIODE WITH VERY NARROW SELF-ALIGNED GUARD RING
ANANTHA, NG
BHATIA, HS
GAUR, S
MAUER, JL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C326 - C326
[9] SCHOTTKY-BARRIER DIODE WITH SELF-ALIGNED FLOATING GUARD RING.
Chuang, C.T.
Arienzo, Maurizio
Tang, D.Duan-Lee
Isaac, Randall D.
IEEE Transactions on Electron Devices, 1984, ED-31 (10) : 1482 - 1486
[10] METAL POLYACETYLENE SCHOTTKY-BARRIER DIODES
KANICKI, J
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1984, 105 (1-4): : 203 - 217

← 1 2 3 4 5 →