SOME ASPECTS OF GE EPITAXIAL-GROWTH BY SOLID-SOLUTION

被引：18

作者：

OTTAVIANI, G ^{[1
]}

CANALI, C ^{[1
]}

MAJNI, G ^{[1
]}

机构：

[1] IST FIS,VIA UNIV 4,MODENA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.322625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：627 / 630

页数：4

共 16 条

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APPLIED PHYSICS LETTERS, 1974, 25 (01) :3-5

[2]

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[3] MEASUREMENT OF SOLUBILITY OF GERMANIUM IN ALUMINUM UTILIZING MEV HE+ BACKSCATTERING [J].

CAYWOOD, JM .

METALLURGICAL TRANSACTIONS, 1973, 4 (03) :735-743

[4] SOLID-PHASE GROWTH OF GE FROM EVAPORATED AL LAYER [J].

CAYWOOD, JM ;

MCCALDIN, JO ;

OTTAVIANI, G ;

FERN, AM .

APPLIED PHYSICS LETTERS, 1972, 20 (08) :326-+

[5]

ELLIOTT RP, 1965, CONSTITUTION BINAR S, P38

[6]

GOLIKOVA OA, 1962, SOV PHYS-SOL STATE, V3, P2259

[7]

MARRELLO V, 1973, PHYS STATUS SOLIDI A, V13, P531

[8]

Mayer J. W., 1970, ION IMPLANTATION SEM

[9]

MEER W, 1967, Z ANGEW PHYSIK, V23, P369

[10]

Mory J., 1972, RADIAT EFF DEFECT S, V13, P57, DOI [10.1080/00337577208231161, DOI 10.1080/00337577208231161]

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