共 16 条
[1]
GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1984, 23 (11)
:L843-L845
[4]
TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1068-1073
[9]
NISHIOKA T, UNPUB
[10]
ALGAAS/GAAS DH-LASERS ON SI SUBSTRATES GROWN USING SUPER LATTICE BUFFER LAYERS BY MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (08)
:L666-L668