INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS

被引：82
作者：
ARENT, DJ
NILSSON, S
GALEUCHET, YD
MEIER, HP
WALTER, W
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期
关键词：
D O I：
10.1063/1.101952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2611 / 2613
页数：3
相关论文
共 16 条
[1]   STRAIN EFFECTS AND BAND OFFSETS IN GAAS/INGAAS STRAINED LAYERED QUANTUM STRUCTURES [J].
ARENT, DJ ;
DENEFFE, K ;
VANHOOF, C ;
DEBOECK, J ;
BORGHS, G .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1739-1747
[2]   A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
BERGER, PR ;
CHANG, K ;
BHATTACHARYA, PK ;
SINGH, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1162-1166
[3]   ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].
BERGER, PR ;
CHANG, K ;
BHATTACHARYA, P ;
SINGH, J ;
BAJAJ, KK .
APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686
[4]   HIGH-POWER CONVERSION EFFICIENCY IN A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].
BOUR, DP ;
EVANS, GA ;
GILBERT, DB .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3340-3343
[5]   CATION INCORPORATION RATE LIMITATIONS IN MOLECULAR-BEAM EPITAXY - EFFECTS OF STRAIN AND SURFACE-COMPOSITION [J].
EVANS, KR ;
STUTZ, CE ;
LORANCE, DK ;
JONES, RL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :259-263
[6]   DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].
EVERHART, TE ;
HOFF, PH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&
[7]   KINETIC ASPECTS OF GROWTH FRONT SURFACE-MORPHOLOGY AND DEFECT FORMATION DURING MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED THIN-FILMS [J].
GHAISAS, SV ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :264-268
[8]   HIGH-EFFICIENCY, CONTINUOUS-WAVE, EPITAXIAL SURFACE-EMITTING LASER WITH PSEUDOMORPHIC INGAAS QUANTUM WELLS [J].
GOURLEY, PL ;
LYO, SK ;
DAWSON, LR .
APPLIED PHYSICS LETTERS, 1989, 54 (15) :1397-1399
[9]   THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS [J].
MADHUKAR, A ;
GHAISAS, SV .
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (01) :1-130
[10]   MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS QUANTUM WELLS ON CHANNELED SUBSTRATES [J].
MEIER, HP ;
VANGIESON, E ;
WALTER, W ;
HARDER, C ;
KRAHL, M ;
BIMBERG, D .
APPLIED PHYSICS LETTERS, 1989, 54 (05) :433-435
12