FAR INFRARED RESONANT ABSORPTION IN N-TYPE SILICON

被引：0

作者：

NEURINGE.LJ

MILWARD, RC

AGGARWAL, RL

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1966年 / S 21卷

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D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：582 / &

共 11 条

[1] THEORY OF ABSORPTION OF ELECTROMAGNETIC RADIATION BY HOPPING IN N-TYPE SILICON + GERMANIUM
BLINOWSKI, J
MYCIELSKI, J
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (1A): : A266 - &
[2] THEORY OF ABSORPTION OF ELECTROMAGNETIC RADIATION BY HOPPING IN N-TYPE SILICON AND GERMANIUM .2.
BLINOWSKI, J
MYCIELSK.J
[J]. PHYSICAL REVIEW, 1965, 140 (3A): : 1024 - +
[3] POLARIZATION CONDUCTIVITY IN P-TYPE GERMANIUM
GOLIN, S
[J]. PHYSICAL REVIEW, 1963, 132 (01): : 178 - &
[4] SUR LE COMPORTEMENT DIFFERENT DES CRISTAUX ET DES VERRES DANS LABSORPTION DE LINFRAROUGE LOINTAIN ( 40-1500MU ) A LA TEMPERATURE DE LHELIUM LIQUIDE
HADNI, A
CLAUDEL, J
GERBAUX, X
MORLOT, G
MUNIER, JM
[J]. APPLIED OPTICS, 1965, 4 (04): : 487 - &
[5] IMPURITY CONDUCTION AT LOW CONCENTRATIONS
MILLER, A
ABRAHAMS, E
[J]. PHYSICAL REVIEW, 1960, 120 (03): : 745 - 755
[6] FAR-INFRARED ABSORPTION IN N-TYPE SILICON DUE TO PHOTON-INDUCED HOPPING
MILWARD, RC
NEURINGE.LJ
[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 664 - &
[7] APPROXIMATIONS FOR AC IMPURITY HOPPING CONDUCTION
POLLAK, M
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A564 - &
[8] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON
POLLAK, M
GEBALLE, TH
[J]. PHYSICAL REVIEW, 1961, 122 (06): : 1742 - &
[9] MICROWAVE ABSORPTION IN SILICON AT LOW TEMPERATURES
TANAKA, S
HANAMURA, E
KOBAYASHI, M
UCHINOKURA, K
[J]. PHYSICAL REVIEW, 1964, 134 (1A): : A256 - +
[10] IMPURITY CONDUCTION IN P-TYPE SILICON AT MICROWAVE FREQUENCIES
TANAKA, S
FAN, HY
[J]. PHYSICAL REVIEW, 1963, 132 (04): : 1516 - &

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