Domain structures in CuGaSe2 epitaxial films

Thin films of CuGaSe2 are grown on GaAs substrates by molecular beam epitaxy. For the growth of the film with chalcopyrite structure on a single crystal substrate which has a zincblende structure, two kinds of domain structure will develop. They are the orientation domain and the anti-phase domain. In this work we demonstrate that orientation domains may not occur with the use of an (001) GaAs substrate, while anti-phase domain boundaries can be eliminated by thermal annealing in a Se-beam nux. Electron diffraction and imaging techniques using diffraction contrast are performed to verify these results.