X-RAY-DAMAGE IN LOW-TEMPERATURE ULTRATHIN SILICON DIOXIDE

被引：5

作者：

LEE, KH ^{[1
]}

CAMPBELL, SA ^{[1
]}

NACHMAN, R ^{[1
]}

REILLY, M ^{[1
]}

CERRINA, F ^{[1
]}

机构：

[1] UNIV WISCONSIN, CTR XRAY LITHOG, STOUGHTON, WI 53589 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of ultrathin oxides used in an x-ray lithography n-channel metal-oxide-silicon process grown at 700 and 950-degrees-C were studied. The breakdown field exceeded 15 MV/cm for both low and high temperature oxides and the interface trap density of the fresh oxide was of order of 10(10) CM-2 eV-1. Oxides grown at 950-degrees-C had a lower interface trap density than 700-degrees-C oxides, but 950-degrees-C oxides are more sensitive to x-ray radiation damage. After 350-degrees-C hydrogen annealing about 80% of the radiation damage in the form of interface traps was recovered.

引用

页码：1635 / 1637

页数：3

共 19 条

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