POSITRON-ANNIHILATION AND CHARGE STATE OF THE VACANCIES IN AS-GROWN AND ELECTRON-IRRADIATED GAAS

被引：4

作者：

CORBEL, C

机构：

[1] Centre d'Etudes Nucléaires de Saclay, Institut National des Sciences et Techniques Nucléaires

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 63卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(92)95189-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

引用

页码：166 / 172

页数：7

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